The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Jun. 07, 2018
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Keiji Ikeda, Kanagawa, JP;
Tsutomu Tezuka, Ibaraki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/768 (2006.01); H01L 27/06 (2006.01); H01L 21/822 (2006.01); H01L 23/522 (2006.01); H01L 27/12 (2006.01); H01L 21/8234 (2006.01); H01L 23/535 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/76898 (2013.01); H01L 21/8221 (2013.01); H01L 21/823475 (2013.01); H01L 23/522 (2013.01); H01L 23/535 (2013.01); H01L 27/0688 (2013.01); H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/1229 (2013.01); H01L 29/0649 (2013.01); H01L 29/7869 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 23/485 (2013.01);
Abstract
According to one embodiment, A semiconductor device includes: a first semiconductor layer; and a plurality of first transistors including a plurality of first gate structures provided on the first semiconductor layer, a first channel region provided in the first semiconductor layer and under the first gate structure, and a plurality of first diffusion regions provided in the first semiconductor layer in a manner to sandwich the first channel region.