The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Aug. 10, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventor:

Seok-Ho Shin, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 27/11 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01); H01L 49/02 (2006.01); H01L 29/08 (2006.01); H01L 27/11517 (2017.01); H01L 29/06 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5329 (2013.01); H01L 21/0337 (2013.01); H01L 21/76897 (2013.01); H01L 27/10814 (2013.01); H01L 27/10852 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 27/11517 (2013.01); H01L 28/40 (2013.01); H01L 28/90 (2013.01); H01L 29/0649 (2013.01); H01L 29/0843 (2013.01);
Abstract

A semiconductor device includes a substrate including first and second regions, which are arranged along a first direction. A first conductive pattern extends in the first direction in the first region. A second conductive pattern extends in the first direction in the first region. The second conductive pattern is spaced apart from the first conductive pattern. A first spacer extends between the first conductive pattern and the second conductive pattern along a sidewall of the first conductive pattern, a sidewall of the second conductive pattern, and a boundary between the first and second regions. A distance between the first conductive pattern and the second region is smaller than a distance between the second conductive pattern and the second region.


Find Patent Forward Citations

Shin, Seok-Ho. (2020). Semiconductor device including conductive patterns (U.S. Patent No. 10665544). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10665544

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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