The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Oct. 04, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Assignee:
Rensas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); C23C 14/06 (2006.01); C23C 14/16 (2006.01); C23C 14/34 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); C23C 14/0641 (2013.01); C23C 14/165 (2013.01); C23C 14/34 (2013.01); H01L 21/2855 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76807 (2013.01); H01L 21/76846 (2013.01); H01L 21/76876 (2013.01); H01L 21/76879 (2013.01); H01L 21/76897 (2013.01); H01L 23/528 (2013.01); H01L 23/5283 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. In other words, in one embodiment, thickness of a tantalum nitride film is increased by increasing the deposition time. Specifically, in one embodiment, deposition time is increased such that a tantalum nitride film provided on the bottom of a connection hole to be coupled to a wide interconnection has a thickness within a range from 5 to 10 nm.