The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Aug. 08, 2018
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Haitao Cheng, San Diego, CA (US);

Chao Song, San Diego, CA (US);

Ye Lu, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01C 3/02 (2006.01); H01L 49/02 (2006.01); H01L 27/02 (2006.01); H01C 17/04 (2006.01); H01C 3/16 (2006.01); G06F 30/36 (2020.01); G06F 30/3312 (2020.01);
U.S. Cl.
CPC ...
H01C 3/02 (2013.01); G06F 30/3312 (2020.01); G06F 30/36 (2020.01); H01C 3/16 (2013.01); H01C 17/04 (2013.01); H01L 27/0207 (2013.01); H01L 28/24 (2013.01);
Abstract

A co-wound resistor with a low parasitic inductance includes a first resistive strip having an input and a second resistive strip having an output. The second resistive strip has a similar shape as the first resistive strip. The second resistive strip is co-wound in a same direction as the first resistive strip. The second resistive strip and the first resistive strip are configured to generate a mutual inductance that cancels an inductance of the first resistive strip and the second resistive strip. The first interconnect coupling the first resistive strip to the second resistive strip. The first resistive strip, the second resistive strip and the first interconnect are on a same level.


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