The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

May. 16, 2016
Applicant:

Tohoku University, Sendai-shi, JP;

Inventors:

Hiroki Koike, Sendai, JP;

Tetsuo Endoh, Sendai, JP;

Assignee:

Tohoku University, Sendai-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1697 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01);
Abstract

A memory circuit () includes: a memory cell (MC) including a variable-resistance element in which a resistance value varies substantially between two levels; a resistance-voltage conversion circuit that converts the resistance value of a memory cell (MC) to be read into a data voltage; a reference circuit (RC) including a series circuit of a variable-resistance element and a linear resistor, the variable-resistance element including substantially the same configuration as the configuration of the variable-resistance element included in the memory cell MCand being set to a lower resistance of two levels; a reference voltage conversion circuit that converts the resistance value of the reference circuit (RC) into a reference voltage; and a sense amplifier (SA) that determines data stored in the memory cell (MC) by comparing the data voltage with the reference voltage.


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