The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Sep. 24, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Joung-Yeal Kim, Yongin-si, KR;

Ju-Suk Bang, Hwaseong-si, KR;

Jung-Yong Lee, Hwaseong-si, KR;

Chae-Il Lim, Hwaseong-si, KR;

Yong-Gwon Jeong, Uiwang-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/406 (2006.01); G11C 7/22 (2006.01); G11C 11/408 (2006.01); G11C 5/14 (2006.01); G11C 7/10 (2006.01); G11C 11/4076 (2006.01);
U.S. Cl.
CPC ...
G11C 7/00 (2013.01); G11C 5/148 (2013.01); G11C 7/1063 (2013.01); G11C 7/222 (2013.01); G11C 11/4076 (2013.01); G11C 11/4087 (2013.01); G11C 11/40615 (2013.01); G11C 11/40618 (2013.01); G11C 11/40626 (2013.01);
Abstract

A memory controller transmits one or more command pairs of a self-refresh entry command and a subsequent self-refresh exit command to a semiconductor memory device during a refresh period. The semiconductor memory device includes a memory cell array including a plurality of memory cell rows each including a plurality of dynamic memory cells, and a refresh control circuit. The refresh control circuit performs a refresh operation on all of the memory cell rows during the refresh period in a self-refresh mode, the self-refresh mode of the refresh period being configured in response to each self-refresh entry command of the one or more command pairs, for each of the one or more command pairs, the memory controller sequentially transmits during the refresh period at least one self-refresh entry command and at least one self-refresh exit command to the semiconductor memory device separated by one or more time gaps.


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