The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Apr. 16, 2018
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Zhiliang Wang, Beijing, CN;

Zhanjie Ma, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/20 (2006.01); H01L 31/113 (2006.01); H01L 31/0232 (2014.01); H01L 27/146 (2006.01); H01L 31/032 (2006.01); H01L 31/0352 (2006.01); H01L 31/112 (2006.01);
U.S. Cl.
CPC ...
G09G 3/20 (2013.01); H01L 27/14609 (2013.01); H01L 31/02322 (2013.01); H01L 31/032 (2013.01); H01L 31/035218 (2013.01); H01L 31/112 (2013.01); H01L 31/1136 (2013.01); G09G 2360/144 (2013.01);
Abstract

The present disclosure provides a photosensitive circuit, a method of driving a photosensitive circuit and a display device. The photosensitive circuit includes: a first photosensitive transistor, configured to be turned on in response to a signal of a first node, to transmit a current flowing through the first photosensitive transistor to a second node and generate an induced electrical signal based on an incident light; a second photosensitive transistor, configured to be turned on in response to a first scan signal, to transmit a voltage of the first scan signal to the first node and generate an induced electrical signal based on an incident light; and a first switch, configured to be turned on in response to the first scan signal, to transmit a signal of the second node to a reading terminal. Threshold voltages of both photosensitive transistors are negatively correlated with an intensity of the incident light.


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