The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Dec. 01, 2016
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Haruhiko Terada, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G06F 12/16 (2006.01); G11C 13/00 (2006.01); G11C 11/00 (2006.01); G11C 11/56 (2006.01); G11C 8/08 (2006.01); G11C 7/10 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G06F 11/10 (2013.01); G06F 11/1048 (2013.01); G06F 12/16 (2013.01); G11C 7/1006 (2013.01); G11C 7/12 (2013.01); G11C 8/08 (2013.01); G11C 11/005 (2013.01); G11C 11/5678 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0033 (2013.01); G11C 2213/72 (2013.01);
Abstract
To suppress an increase in a voltage drop in a non-volatile memory including a variable resistive element installed therein. A memory controller includes a voltage drop amount estimating unit and an encoding unit. The voltage drop amount estimating unit estimates a voltage drop amount from a wiring resistance of a wiring up to a memory cell and a leakage current occurring in the memory cell when original data is caused to be held in the memory cell. The encoding unit performs a predetermined encoding process on the original data in a case in which the estimated voltage drop amount exceeds a predetermined threshold value.