The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Dec. 06, 2017
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventor:

Zhuming Deng, Guangdong, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1362 (2006.01); G02F 1/1335 (2006.01); G02F 1/1676 (2019.01); G02F 1/137 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136209 (2013.01); G02F 1/133512 (2013.01); G02F 1/136286 (2013.01); G02F 1/1676 (2019.01); G02F 1/136213 (2013.01); G02F 1/136227 (2013.01); G02F 2001/13775 (2013.01); G02F 2001/136218 (2013.01); G02F 2001/136222 (2013.01);
Abstract

An array substrate, a liquid crystal display panel and a liquid crystal display apparatus are provided. The array substrate comprising first substrate; thin film transistor and data line are positioned on first substrate, data line electrically connecting with source or drain of thin film transistor; blocking element stacking positioned on thin film transistor; first shielding electrode and second shielding electrode located on lateral side of data line which away first substrate, vertical projections of first shielding electrode and second shielding electrode on first substrate are respectively covering data lines, thin film transistor positioned between first shielding electrode and second shielding electrode; transverse electrode connecting between first shielding electrode and second shielding electrode, transverse electrode located on lateral side of thin film transistor which away first substrate, and at least partial of transverse electrode is stacked positioned on blocking element.


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