The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Mar. 23, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
Eiji Yoshikawa, Tokyo, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, Tokyo, JP;
Abstract
A semiconductor pressure sensor includes: a first semiconductor substrate having a plurality of recesses formed thereon; an intermediate semiconductor substrate joined to the first semiconductor substrate with a first oxide film interposed therebetween; a second semiconductor substrate joined to the intermediate semiconductor substrate with a second oxide film interposed therebetween; a first reference pressure chamber formed as a space surrounded by a first recess of the first semiconductor substrate and the intermediate semiconductor substrate; a second reference pressure chamber formed as a space surrounded by a second recess formed on the first semiconductor substrate, the intermediate semiconductor substrate, and the second semiconductor substrate, the intermediate semiconductor substrate having a through hole communicating with the second recess of the first semiconductor substrate; and piezoresistors formed on a surface of the second semiconductor substrate that receives pressure, along outer peripheries of the first and second reference pressure chambers.