The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Mar. 05, 2019
Applicant:

Rosemount Aerospace Inc., Burnsville, MN (US);

Inventor:

Dosi Dosev, Chanhassen, MN (US);

Assignee:

Rosemount Aerospace Inc., Burnsville, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00595 (2013.01); B81C 2201/0133 (2013.01);
Abstract

A method of manufacturing a patterned aluminum nitride layer includes growing an amorphous patterned layer on a seed layer, which promotes growth of a first type aluminum nitride layer that has a disordered crystallographic structure. The seed layer promotes growth of a second type aluminum nitride layer with a vertically oriented columnar crystal structure. The method also includes depositing an aluminum nitride layer over the amorphous patterned layer and the seed layer to form the first type aluminum nitride layer with the disordered crystallographic structure over the amorphous patterned layer and the second type aluminum nitride layer with the vertically oriented columnar crystal structure over the seed layer. The method also includes depositing a masking layer over the second type aluminum nitride layer and etching away the first type aluminum nitride layer.


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