The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Feb. 27, 2019
Applicant:

The Florida State University Research Foundation, Inc., Tallahassee, FL (US);

Inventors:

Hui Li, Tallahassee, FL (US);

Yanjun Shi, Tallahassee, FL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01); H02M 1/08 (2006.01); H03K 17/082 (2006.01); H02M 3/335 (2006.01);
U.S. Cl.
CPC ...
H03K 17/162 (2013.01); H02M 1/08 (2013.01); H02M 3/33576 (2013.01); H03K 17/0822 (2013.01);
Abstract

A gate driver for power semiconductors is disclosed. The gate driver includes modulation to modulate signals from a controller to a radio frequency (RF) range that is much higher than frequencies associated with conducted EMI. The gate driver also includes RF transformer and tank circuit to that couples the modulated signals, filters EMI, and provides galvanic isolation. The gate driver further includes a RF demodulator and unfolder circuit for converting the RF signal into a signal appropriate for controlling the gate of a power semiconductor for switching. Additionally, the disclosed gate driver provides active gate control using programmable waveforms with values that can range over a continuous range of voltages.


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