The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Aug. 10, 2018
Renesas Electronics Corporation, Tokyo, JP;
Masataka Minami, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device that can perform voltage monitoring with a small circuit area is provided. The resistive subdivision circuit RDIV performs the resistive subdivision of the input voltage Vin by means of the input ladder resistor (R-R), and drives the nMOS transistors MN-MNby the subdivided input voltages Vi-Vieach having different resistive subdivision ratios, respectively. The pMOS transistor MPis provided in common for the pMOS transistors MP-MP, and configures a current mirror circuit with each of the pMOS transistors MP-MP. The bias current generating circuit IBSG supplies a bias current to the pMOS transistor MP