The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Jan. 15, 2019
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Sungku Yeo, Suwon-si, KR;

Gwanghyeon Jeong, Daejeon, KR;

Songcheol Hong, Daejeon, KR;

Jaeseok Park, Suwon-si, KR;

Seunghun Wang, Daejeon, KR;

Youngho Ryu, Suwon-si, KR;

Junhan Lim, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 5/00 (2006.01); H03H 11/32 (2006.01); H03K 17/687 (2006.01); H03M 1/66 (2006.01); H02J 50/10 (2016.01); H03M 1/74 (2006.01);
U.S. Cl.
CPC ...
H03K 5/00 (2013.01); H03H 11/32 (2013.01); H03K 17/687 (2013.01); H03M 1/66 (2013.01); H02J 50/10 (2016.02); H03K 2005/00286 (2013.01); H03M 1/742 (2013.01);
Abstract

A vector sum circuit and a phase controller including the vector sum circuit are provided. The vector sum circuit includes an amplifier configured to amplify an input orthogonal signal by using a first metal oxide semiconductor field effect transistor (MOSFET), and a self body-biasing circuit comprising a resistor. The self body-biasing circuit is configured to connect a drain and a body of the first MOSFET to reduce a voltage connected to the body as a current at the drain increases.


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