The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Jan. 15, 2019
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Yoji Kashihara, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 3/356 (2006.01); G11C 16/04 (2006.01); G11C 8/08 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
H03K 3/35613 (2013.01); G11C 8/08 (2013.01); G11C 16/0466 (2013.01); G11C 16/0408 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/32 (2013.01);
Abstract

Provided is a level shifter which can retain an operation margin and enhance an exceeded-breakdown-voltage preventing effect. The level shifter in an embodiment includes an exceeded-breakdown-voltage prevention circuit between a pair of first-conductivity-type cross-coupled transistors and a pair of second-conductivity-type input transistors. The exceeded-breakdown-voltage prevention circuit includes first-conductivity-type first transistors and second-conductivity-type second transistors which are coupled in series to each other, and first-conductivity-type third transistors coupled in series to the first and second transistors on a higher-potential side.


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