The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Jun. 05, 2018
Renesas Electronics Corporation, Tokyo, JP;
Satoshi Narumi, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
The junction temperature of a field effect transistor is detected with a higher degree of accuracy than in the past. A semiconductor device controls multiple field effect transistors that configure a power conversion device, and includes a differential amplifier and a controller that controls ON/OFF of the multiple field effect transistors. The differential amplifier detects the potential difference between a source and a drain of a field effect transistor that is controlled in the OFF state by the controller and that induces an electric current flowing through the body diode thereof, among the multiple field effect transistors.