The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Jan. 16, 2017
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, Tokyo, JP;

Inventors:

Takao Mitsui, Tokyo, JP;

Matahiko Ikeda, Tokyo, JP;

Masakazu Tani, Tokyo, JP;

Assignee:

MITSUBISHI ELECTRIC CORPORATION, Chiyoda-Ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H02M 1/32 (2007.01); H02P 29/68 (2016.01); H03K 17/0812 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H02M 1/32 (2013.01); H01L 23/34 (2013.01); H02P 29/68 (2016.02); H03K 17/08122 (2013.01); H02M 2001/325 (2013.01); H02M 2001/327 (2013.01); H03K 2017/0806 (2013.01);
Abstract

A plurality of semiconductor elements have sources which are commonly connected, and drains which are commonly connected. A voltage measurement unit measures an ON voltage between the source of a first semiconductor element of the plurality of semiconductor elements and the drain of the first semiconductor element. A determination unit receives information indicating a magnitude of an ON current between the source of the first semiconductor element and the drain of the first semiconductor element, and a measured value of the ON voltage in the voltage measurement unit, and determines whether the plurality of semiconductor elements are in a normal state or in an overheated state based on the measured value of the ON voltage and the received information indicating the magnitude of the ON current.


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