The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Apr. 01, 2019
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventor:
Assignee:

STMicroelectronics S.R.L., Agrate Brianza (MB), IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02M 7/06 (2006.01); H02M 7/217 (2006.01); H02M 1/00 (2006.01); H02M 3/335 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H02M 7/06 (2013.01); H02M 7/217 (2013.01); H02M 3/33592 (2013.01); H02M 2001/0048 (2013.01);
Abstract

A sense terminal is configured to sense a drain-to-source voltage of a field effect transistor and a drive terminal is configured to drive the gate terminal of the field effect transistor to alternatively turn the field effect transistor on and off to provide a rectified current flow in the field effect transistor channel. A comparator is configured to perform a comparison of the drain-to-source voltage of the field effect transistor with a reference threshold and to detect alternate downward and upward crossings of the reference threshold and the drain-to-source voltage. A PWM signal generator is configured to drive the gate terminal of the field effect transistor to turn the field effect transistor on and off as a result of the alternate downward and upward crossings of the reference threshold by the drain-to-source voltage.


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