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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10658588 B1

PDFFull Text
Expired
Date of Patent:
May. 19, 2020

Filed:

Apr. 06, 2017

Memory cell switch device

Applicants:

Shuichiro Yasuda, Boise, ID (US);

Tomohito Tsushima, Boise, ID (US);

Inventors:

Shuichiro Yasuda, Boise, ID (US);

Tomohito Tsushima, Boise, ID (US);

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:

Sheridan Ross P.C.

Primary Examiner:

Dang T Ton

Int. Cl.
CPC ...
H04L 12/28 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01); C23C 14/06 (2006.01); H01L 21/02 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 45/147 (2013.01); C23C 14/0617 (2013.01); G11C 13/003 (2013.01); G11C 13/0011 (2013.01); G11C 13/0033 (2013.01); H01L 21/02178 (2013.01); H01L 21/02186 (2013.01); H01L 27/02 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/141 (2013.01); H01L 45/16 (2013.01); G11C 2213/11 (2013.01); G11C 2213/12 (2013.01); G11C 2213/52 (2013.01); G11C 2213/56 (2013.01); G11C 2213/71 (2013.01); G11C 2213/76 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01);
Abstract

Memory structures with a plurality of memory cells that each include memory devices in combination with switch devices are provided. The memory device and switch device of each cell are connected in series, and include at least first and second electrodes. The first electrode features a relatively high resistance, to provide a reduced snap current during operation of the memory device. The first electrode with a relatively high resistance can contain or be entirely composed of TiAlN.

Find Patent Forward Citations

Yasuda, Shuichiro. (2020). Memory cell switch device (U.S. Patent No. 10658588). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10658588

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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