The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Mar. 01, 2019
Toshiba Memory Corporation, Tokyo, JP;
Kensuke Ota, Yokkaichi Mie, JP;
Yoko Yoshimura, Yokkaichi Mie, JP;
Yoshihiko Moriyama, Setagaya Tokyo, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A storage device includes a first conductive layer and a second conductive layer, with an intermediate layer therebetween. The intermediate layer includes a first and second compound regions. The first compound region includes first and second adjacent portions and the second compound region includes third and fourth adjacent portions. Electrical resistance between the first and second conductive layers changes according to a polarity applied across the intermediate layer. In a first polarity state, a concentration of a first element in the first portion is higher than a concentration of the first element in the second portion of the first compound region. A thickness of the third portion in the first polarity state is greater than the thickness of the fourth portion in the first polarity state.