The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Jan. 30, 2017
Applicant:

Dowa Electronics Materials Co., Ltd., Chiyoda-ku, Tokyo, JP;

Inventor:

Norio Tasaki, Akita, JP;

Assignee:

DOWA Electronics Materials Co., Ltd., Chiyoda-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/60 (2010.01); H01L 33/38 (2010.01); H01L 33/58 (2010.01); H01L 33/62 (2010.01); H01L 33/40 (2010.01); H01L 31/10 (2006.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 31/10 (2013.01); H01L 33/40 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0033 (2013.01);
Abstract

Provided is a semiconductor optical device with light extraction efficiency or light collecting efficiency higher than that of conventional devices and with a reduced peeling ratio of a wiring electrode portion, and a method of manufacturing the same. In the semiconductor optical, a wiring electrode portionis provided on a surface of a semiconductor layerthat serves as a light emitting surface or a light receiving surface, the line width Wof the wiring electrode portionis 2 μm or more and 5 μm or less, the wiring electrode portionhas a metal layeron the semiconductor layerand a conductive hard filmon the metal layer, and the conductive hard filmis harder than the metal layer


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