The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Apr. 18, 2018
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/02 (2006.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/0304 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 31/02027 (2013.01); H01L 31/02161 (2013.01); H01L 31/022408 (2013.01); H01L 31/03042 (2013.01); H01L 31/03529 (2013.01); H01L 31/184 (2013.01);
Abstract
Provided is an optical detection device including a first ohmic contact layer of a first conductivity type, a second ohmic contact layer of a second conductivity type, and first and second mesa structures stacked between the first and second ohmic contact layers. The first mesa structure includes an electric field buffer layer; and a diffusion layer formed in the electric field buffer layer. The second mesa structure includes a light absorbing layer and a grading layer on the light absorbing layer.