The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Jan. 27, 2017
Flisom Ag, Niederhasli, CH;
Patrick Reinhard, Zurich, CH;
Adrian Chirila, Herznach, CH;
FLISOM AG, Niederhasli, CH;
Abstract
A method for fabricating thin-film optoelectronic devices (), the method comprising: providing a alkali-nondiffusing substrate (), forming a back-contact layer (); forming at least one absorber layer () made of an ABC chalcogenide material, adding least one and advantageously at least two different alkali metals, and forming at least one front-contact layer () wherein one of said alkali metals comprise Rb and/or Cs and where, following forming said front-contact layer, in the interval of layers () from back-contact layer (), exclusive, to front-contact layer (), inclusive, the comprised amounts resulting from adding alkali metals are, for Rb and/or Cs, in the range of 500 to 10000 ppm and, for the other alkali metals, typically Na or K, in the range of 5 to 2000 ppm and at most 1/2 and at least 1/2000 of the comprised amount of Rb and/or Cs. The method () is advantageous for more environmentally-friendly production of photovoltaic devices on flexible substrates with high photovoltaic conversion efficiency and faster production rate.