The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Jun. 05, 2014
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Kwangsun Ji, Seoul, KR;

Seungjik Lee, Seoul, KR;

Sehwon Ahn, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 21/30 (2006.01); H01L 31/0745 (2012.01); H01L 31/18 (2006.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 21/3003 (2013.01); H01L 31/0745 (2013.01); H01L 31/0747 (2013.01); H01L 31/1804 (2013.01); H01L 31/1868 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

A manufacturing method of a solar cell is discussed. The manufacturing method of the solar cell includes forming a tunneling layer on one surface of a semiconductor substrate, forming a semiconductor layer on the tunneling layer, doping the semiconductor layer with a first conductive dopant and a second conductive dopant to form a first conductive semiconductor layer and a second conductive semiconductor layer, and diffusing hydrogen into the first and second conductive semiconductor layers to hydrogenate the first and second conductive semiconductor layers.


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