The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Feb. 24, 2016
Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventors:

Masatomi Harada, Sakai, JP;

Kenichi Higashi, Sakai, JP;

Takeshi Kamikawa, Sakai, JP;

Toshihiko Sakai, Sakai, JP;

Tokuaki Kuniyoshi, Sakai, JP;

Kazuya Tsujino, Sakai, JP;

Liumin Zou, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/0747 (2012.01); H01L 31/0376 (2006.01); H01L 31/0745 (2012.01); H01L 31/05 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0224 (2013.01); H01L 31/022441 (2013.01); H01L 31/03762 (2013.01); H01L 31/03765 (2013.01); H01L 31/0504 (2013.01); H01L 31/0745 (2013.01); H01L 31/0747 (2013.01); Y02E 10/50 (2013.01);
Abstract

In a photovoltaic device (), first amorphous semiconductor portions () and second amorphous semiconductor portions () are provided alternately on one of faces of a semiconductor substrate (). Each first amorphous semiconductor portion () has at least one first amorphous semiconductor strip (), and each second amorphous semiconductor portion () has at least one second amorphous semiconductor strip (). A plurality of first electrodes () are provided spaced apart from each other on each first amorphous semiconductor strip (), and a plurality of second electrodes () are provided spaced apart from each other on each second amorphous semiconductor strip ().


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