The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

May. 31, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, CN;

Inventors:

Junhao Han, Beijing, CN;

Bingkun Yin, Beijing, CN;

Jun Ma, Beijing, CN;

Min Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78669 (2013.01); H01L 21/28518 (2013.01); H01L 29/0847 (2013.01); H01L 29/458 (2013.01); H01L 29/66765 (2013.01); H01L 29/7845 (2013.01); H01L 29/78618 (2013.01);
Abstract

Disclosed is a thin film transistor, an array substrate, a method for manufacturing the same, and a display device. The method includes: forming a source and drain on a base substrate and forming a semiconductor layer. Between the step of forming the source and drain and the step of forming the semiconductor layer, the method further includes: forming a diffusion barrier layer. Metal atoms diffused from the source and drain and passing through the diffusion barrier layer react with a part of the semiconductor layer near the source and drain, and a metal transition layer containing metal silicide is formed.


Find Patent Forward Citations

Loading…