The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Sep. 21, 2018
Applicant:
Fuji Electric Co., Ltd., Kawasaki, JP;
Inventor:
Masaharu Yamaji, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 27/06 (2006.01); H01L 21/761 (2006.01); H01L 29/739 (2006.01); H01L 29/40 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/761 (2013.01); H01L 27/0629 (2013.01); H01L 29/063 (2013.01); H01L 29/0878 (2013.01); H01L 29/404 (2013.01); H01L 29/7393 (2013.01); H01L 29/78 (2013.01); H01L 29/7832 (2013.01); H03K 19/018571 (2013.01);
Abstract
A p-type isolation region is provided at a part between a p-type ground region and a circuit region (a high potential region and an intermediate potential region) in an n-type well region. The p-type isolation region is electrically connected with a H-VDD pad and an n-type drain region of a HVNMOS. The p-type isolation region has between n-type pickup connect regions and between n-type drain regions of two of the HVNMOSs, a protruding part (a T-shaped part, an L-shaped part, a partial U-shaped part) or an additional part that protrudes toward a p-ground region.