The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Aug. 24, 2018
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Yusuke Yamashita, Nagoya, JP;

Satoru Machida, Nagakute, JP;

Takahide Sugiyama, Nagakute, JP;

Jun Saito, Nagoya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/36 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 27/06 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 27/0629 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/0642 (2013.01); H01L 29/0696 (2013.01); H01L 29/08 (2013.01); H01L 29/0847 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 29/407 (2013.01); H01L 29/7393 (2013.01); H01L 29/7397 (2013.01); H01L 29/7806 (2013.01); H01L 29/7839 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01); H01L 29/0692 (2013.01); H01L 29/0834 (2013.01); H01L 29/20 (2013.01); H01L 29/41766 (2013.01);
Abstract

Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.


Find Patent Forward Citations

Loading…