The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Sep. 06, 2018
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Ryuji Ohba, Yokkaichi Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A memory device includes plural electrode layers stacked in a first direction, a semiconductor layer interacting with the plural electrode layers and extending in the first direction, a first insulating film provided between the semiconductor layer and at least one electrode layer and extending along the semiconductor layer in the first direction, and a charge trapping film provided between the electrode layer and the first insulating film. The memory device further includes a second insulating film provided between the charge trapping film and the first insulating film and in contact with the first insulating film. In a flat band state, the charge trapping film has a first trap level located at a level deeper than a conduction band of the semiconductor layer and the second insulating film has a second trap level that is closer to the conduction band of the semiconductor layer than the first trap level.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile