The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Jun. 28, 2018
Applicant:
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0661 (2013.01); H01L 29/1095 (2013.01); H01L 29/66068 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/0638 (2013.01);
Abstract
A silicon carbide semiconductor device includes a semiconductor substrate of a first conductivity type; an active region in which a main current flows provided on the semiconductor substrate; a termination region disposed outside of the active region and in which a voltage withstanding structure is formed; and a damaged region disposed outside the termination region and in which crystallinity is impaired, the damaged region being exposed at a cut surface that is formed when singulation is performed.