The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Jan. 26, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jongki Jung, Hwaseong-si, KR;
Myungil Kang, Yongin-si, KR;
Yoonhae Kim, Suwon-si, KR;
Kwanheum Lee, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper surface of the active fin. The source/drain includes a first crystal growth portion and a second crystal growth portion sharing a plane with the first crystal growth portion and having a lower surface disposed at a lower level than a lower surface of the first crystal growth portion.