The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Jul. 17, 2018
Applicant:

Microchip Technology Incorporated, Chandler, AZ (US);

Inventors:

Justin Hiroki Sato, West Linn, OR (US);

Yaojian Leng, Portland, OR (US);

Greg Stom, Rhododendron, OR (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/24 (2013.01); H01L 21/2855 (2013.01); H01L 21/31111 (2013.01); H01L 21/32051 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/5228 (2013.01); H01L 21/0217 (2013.01); H01L 21/31053 (2013.01);
Abstract

A method for manufacturing a thin film resistor (TFR) module in an integrated circuit (IC) structure may include forming a trench in a dielectric region; forming a TFR element in the trench, the TFR element including a laterally-extending TFR region and a TFR ridge extending upwardly from a laterally-extending TFR region; depositing at least one metal layer over the TFR element; and patterning the at least one metal layer and etching the at least one metal layer using a metal etch to define a pair of metal TFR heads over the TFR element, wherein the metal etch also removes at least a portion of the upwardly-extending TFR ridge. The method may also include forming at least one conductive TFR contact extending through the TFR element and in contact with a respective TFR head to thereby increase a conductive path between the respective TFR head and the TFR element.


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