logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10658446 B1

PDFFull Text
Date of Patent:
May. 19, 2020

Filed:

Nov. 29, 2017

Method for manufacturing oled backplane comprising active layer formed of first, second, and third oxide semiconductor layers

Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventor:

Fangmei Liu, Guangdong, CN;

Assignee:

SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen, CN;

Attorneys:

Hemisphere Law, PLLC

Zhigang Ma

Primary Examiner:

Daniel Whalen

Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01); H01L 21/02 (2006.01); H01L 21/383 (2006.01); H01L 21/443 (2006.01); H01L 21/4757 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 27/3246 (2013.01); H01L 27/3272 (2013.01); H01L 51/5206 (2013.01); H01L 51/5221 (2013.01); H01L 51/56 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/383 (2013.01); H01L 21/443 (2013.01); H01L 21/47573 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H01L 29/78696 (2013.01); H01L 2227/323 (2013.01);
Abstract

A method for manufacturing an organic light-emitting diode (OLED) backplane is provided. The method includes sequentially depositing a first oxide semiconductor layer, a second oxide semiconductor layer and a third oxide semiconductor layer to obtain an active layer of a thin film transistor. The flow ratio of an argon gas and an oxygen gas introduced during the deposition of the first and third oxide semiconductor layers is greater than the flow ratio of the argon gas and the oxygen gas introduced during the deposition of the second oxide semiconductor layer. As a result, the oxygen content of the first and third oxide semiconductor layers is greater than the oxygen content of the second oxide semiconductor layer. Therefore, the conductivity of the active layer of the thin film transistor device is enhanced. The interface defects are reduced. The stability of the thin film transistor device is improved.

Find Patent Forward Citations

Loading…