The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
May. 20, 2019
Applicant:
Riken, Saitama, JP;
Inventors:
Yoshio Kaneko, Saitama, JP;
Yoshinori Tokura, Saitama, JP;
Assignee:
RIKEN, Saitama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 19/08 (2006.01); G11C 11/00 (2006.01); G11C 11/18 (2006.01); G11C 11/14 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 27/105 (2006.01); H01L 43/08 (2006.01); H01L 21/8239 (2006.01); H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01L 21/8239 (2013.01); H01L 27/105 (2013.01); H01L 29/82 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract
To provide a high-speed, large-scale non-volatile skyrmion random access memory that prevents incorrect writing and incorrect erasure, has a circuit with good storage-data sensitivity, generates smaller leakage current, and consumes less power. To provide a magnetic element for generating and erasing a skyrmion including: a first magnetic material thin film in which the skyrmion is generated and erased; a sensing element for sensing the skyrmion; and at least one of a first transistor for selecting the first magnetic material thin film, and a second transistor for selecting the skyrmion sensing element.