The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Jul. 18, 2019
Applicant:
Samsung Display Co., Ltd., Yongin-Si, Gyeonggi-Do, KR;
Inventors:
Jihun Lim, Hwaseong-si, KR;
Jaybum Kim, Seoul, KR;
Joonseok Park, Yongin-si, KR;
Kyoungseok Son, Seoul, KR;
Junhyung Lim, Seoul, KR;
Assignee:
Samsung Display Co., Ltd., , KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/788 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1251 (2013.01); G02F 1/1368 (2013.01); G02F 1/136213 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1237 (2013.01); H01L 27/1255 (2013.01); H01L 27/1262 (2013.01); H01L 27/3244 (2013.01); H01L 29/4908 (2013.01); H01L 29/788 (2013.01); H01L 29/7869 (2013.01); H01L 29/78609 (2013.01); H01L 29/78675 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01); G02F 2202/10 (2013.01); H01L 27/3248 (2013.01); H01L 27/3262 (2013.01); H01L 27/3265 (2013.01); H01L 27/3276 (2013.01); H01L 29/66757 (2013.01); H01L 29/66825 (2013.01); H01L 29/66969 (2013.01); H01L 2227/323 (2013.01);
Abstract
A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.