The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Oct. 24, 2017
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Denso Corporation, Kariya-shi, Aichi, JP;
Souichi Yoshida, Matsumoto, JP;
Masaki Tamura, Shiojiri, JP;
Kenji Kouno, Kariya, JP;
Hiromitsu Tanabe, Kariya, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
DENSO CORPORATION, Kariya, Aichi, JP;
Abstract
On a front surface side of an nsemiconductor substrate, an emitter electrode and trench gates each including a p base layer, a trench, a gate oxide film and a gate electrode are provided in an IGBT region and a FWD region. Among p base layers each between adjacent trenches, p base layers having an nemitter region are the IGBT emitter region and the p base layers not having the nemitter region are the FWD anode region. A lateral width of an ncathode region is narrower than a lateral width of the FWD anode region. A difference of a lateral width of the FWD anode region and a lateral width of the ncathode region is 50 μm or more. Thus, a semiconductor device may be provided that reduces the forward voltage drop while suppressing waveform oscillation during reverse recovery and having soft recover characteristics.