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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10658359 B1

PDFFull Text
Date of Patent:
May. 19, 2020

Filed:

Oct. 08, 2018

Semiconductor device

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Koji Tanaka, Tokyo, JP;

Fumihito Masuoka, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Neil R Prasad

Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0716 (2013.01); H01L 29/41708 (2013.01); H01L 29/4958 (2013.01); H01L 29/66136 (2013.01); H01L 29/7395 (2013.01); H01L 29/861 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract

A semiconductor device, which is a diode, includes the following: an n cathode layer, which is an n-type region, disposed in a surface layer of a semiconductor substrate; a p cathode layer, which is a p-type region, disposed in the surface layer; and a cathode electrode, which is a metal electrode, in contact with both of the n cathode layer and the p cathode layer. The cathode electrode includes a first metal layer in contact with both of the n cathode layer and the p cathode layer, and a second metal layer disposed on the first metal layer. A contact surface between the first metal layer and the second metal layer has an oxygen concentration lower than the oxygen concentration of a contact surface between the first metal layer, and the n cathode layer and the p cathode layer.

Find Patent Forward Citations

Tanaka, Koji. (2020). Semiconductor device (U.S. Patent No. 10658359). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10658359

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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