The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Aug. 21, 2018
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Daisuke Murata, Tokyo, JP;
Yuji Imoto, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/492 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); H01L 23/492 (2013.01); H01L 23/498 (2013.01); H01L 24/27 (2013.01); H01L 24/30 (2013.01); H01L 24/32 (2013.01); H01L 23/3107 (2013.01); H01L 23/3121 (2013.01); H01L 23/562 (2013.01); H01L 24/33 (2013.01); H01L 24/40 (2013.01); H01L 24/83 (2013.01); H01L 24/84 (2013.01); H01L 25/072 (2013.01); H01L 2224/27013 (2013.01); H01L 2224/2746 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/3003 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/37099 (2013.01); H01L 2224/40137 (2013.01); H01L 2224/83385 (2013.01); H01L 2224/83444 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/84801 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/014 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/15724 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18301 (2013.01); H01L 2924/3656 (2013.01);
Abstract
A semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 μm or more.