The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Sep. 09, 2016
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Shigeto Fujita, Tokyo, JP;

Tetsuya Matsuda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 25/07 (2006.01); H01R 11/01 (2006.01); H01L 29/20 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/48 (2013.01); H01L 25/07 (2013.01); H01L 25/074 (2013.01); H01L 25/18 (2013.01); H01L 29/2003 (2013.01); H01R 11/01 (2013.01);
Abstract

A lower electrode, a semiconductor chip provided on the lower electrode, a pressure pad provided above or below the semiconductor chip, an upper electrode provided on a structure in which the pressure pad is overlapped with the semiconductor chip, and a connection conductor that provides a new current path between the lower electrode and the upper electrode only when a distance between the lower electrode and the upper electrode becomes larger than a predetermined value are provided. The distance between the lower electrode and the upper electrode is variable, and the pressure pad electrically connects the lower electrode and the upper electrode together via the semiconductor chip regardless of the distance between the lower electrode and the upper electrode.


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Fujita, Shigeto. (2020). Semiconductor device (U.S. Patent No. 10658268). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10658268

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