The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Jul. 03, 2018
Shenyang Silicon Technology Co., Ltd., Shenyang, CN;
Jie Li, Shenyang, CN;
Shenyang Silicon Technology Co., Ltd., Shenyang, CN;
Abstract
A method for preparing an SOI wafer by using rapid thermal processing includes: taking a silicon wafer as a raw material, sequentially performing process steps of oxidation, Himplantation and bonding to obtain a bonded wafer with an Himplantation layer; and then splitting the bonded wafer by using rapid thermal processing and microwaves to obtain a required SOI wafer. In the present invention, an SOI film after wafer splitting has better thickness uniformity and lower roughness. The present invention may improve lattice damage after implantation and reduce SOI surface defects after wafer splitting and thus improve the SOI surface quality. The present invention is high in wafer-splitting speed and thus reduces silicon wafer contamination. The present invention has high efficiency and an excellent comprehensive technical effect.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile