The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Nov. 16, 2017
Applicant:
Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;
Inventors:
Assignee:
ABLIC INC., Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/67 (2006.01); H01L 21/3065 (2006.01); C09K 13/00 (2006.01); H01L 21/308 (2006.01); H01J 37/32 (2006.01); H05H 1/46 (2006.01); C09K 13/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); C09K 13/00 (2013.01); C09K 13/08 (2013.01); H01J 37/32192 (2013.01); H01J 37/32678 (2013.01); H01L 21/3086 (2013.01); H01L 21/67069 (2013.01); H05H 1/46 (2013.01);
Abstract
Provided is a method of manufacturing a semiconductor device with which a trench shape having vertical, flat, and smooth side wall surfaces can be formed even at room temperature. A semiconductor substrate is placed on a sample stage which is kept at room temperature in a reaction container. A trench is formed in the semiconductor substrate by plasma etching that uses etching gas including oxygen and sulfur hexafluoride, while controlling the gas ratio of oxygen to sulfur hexafluoride so that the gas ratio is from 70% to 100%.