The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Jun. 06, 2016
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Kenichi Iguchi, Matsumoto, JP;

Haruo Nakazawa, Matsumoto, JP;

Masaaki Ogino, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/228 (2006.01); H01L 21/268 (2006.01); H01L 21/67 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 21/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/228 (2013.01); H01L 21/0455 (2013.01); H01L 21/268 (2013.01); H01L 21/67017 (2013.01); H01L 29/1608 (2013.01); H01L 21/2225 (2013.01);
Abstract

An impurity-doping apparatus is provided with: a supporting plate which supports a semiconductor substrate; a wall-like block disposed above the supporting plate floating away from the semiconductor substrate, the wall-like block implements a recess inside so as to establish a space for a solution region containing impurity elements, the solution region is localized on an upper surface of the semiconductor substrate, the upper surface being opposite to an bottom surface facing to the supporting plate; and a laser optical system, configured to irradiate a laser beam onto the upper surface of the semiconductor substrate, through the solution region surrounded by the wall-like block, wherein the impurity elements are doped into a part of the semiconductor substrate by irradiation of the laser beam.


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