The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Feb. 20, 2019
Applicant:

Hitachi High-tech Science Corporation, Tokyo, JP;

Inventors:

Yoko Nakajima, Tokyo, JP;

Yoshimi Kawanami, Tokyo, JP;

Hironori Moritani, Tokyo, JP;

Hiroshi Oba, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 9/02 (2006.01); H01J 37/305 (2006.01); C25F 3/08 (2006.01); C25F 3/00 (2006.01); C25F 3/16 (2006.01); C25F 3/26 (2006.01);
U.S. Cl.
CPC ...
H01J 9/025 (2013.01); C25F 3/00 (2013.01); C25F 3/08 (2013.01); C25F 3/16 (2013.01); C25F 3/26 (2013.01); H01J 37/3053 (2013.01); H01J 2209/012 (2013.01);
Abstract

Disclosed is a method of manufacturing an emitter in which the tip of the emitter can be formed into a desired shape even when various materials are used for the emitter. The method includes performing an electrolytic polishing process of polishing a front end of a conductive emitter material so that a diameter of the front end is gradually reduced toward a tip; performing a first etching process by irradiating a processing portion of the emitter material processed by the electrolytic polishing process with a charged particle beam; performing a sputtering process by irradiating the pointed portion formed by the first etching process with a focused ion beam; and performing a secondary etching process of further sharpening the tip by an electric field induced gas etching processing while observing a crystal structure of the tip of the pointed portion processed by the sputtering process using a field ion microscope.


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