The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Jan. 18, 2019
Applicant:

Everspin Technologies, Inc., Chandler, AZ (US);

Inventors:

Thomas Andre, Austin, TX (US);

Syed M. Alam, Austin, TX (US);

Frederick Neumeyer, Austin, TX (US);

Assignee:

Everspin Technologies, Inc., Chandler, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 5/147 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); H01L 27/224 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); G11C 2029/5006 (2013.01);
Abstract

The present disclosure is drawn to, among other things, a magnetic memory. The magnetic memory comprises a first common line, a second common line, and a memory cell. The magnetic memory further includes a bias voltage generation circuit and a voltage driver. The bias voltage generation circuit and the voltage driver are configured to provide driving voltages to the memory cell during access operations.


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