The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Mar. 16, 2018
Applicants:

The Trustees of Dartmouth College, Hanover, NH (US);

Laxense Inc., Walnut, CA (US);

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

Jifeng Liu, Hanover, NH (US);

Xiaoxin Wang, Hanover, NH (US);

Juejun Hu, Newton, MA (US);

Xiaochen Sun, Chino Hills, CA (US);

Tian Gu, Fairfax, VA (US);

Assignees:

THE TRUSTEES OF DARTMOUTH COLLEGE, Hanover, NH (US);

LAXENSE INC., Walnut, CA (US);

MASSACHUSETTS INSTITUTE OF TECHNOLOGY, Cambridge, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/017 (2006.01); G02F 1/015 (2006.01);
U.S. Cl.
CPC ...
G02F 1/017 (2013.01); G02F 2001/0151 (2013.01); G02F 2001/0157 (2013.01); G02F 2202/101 (2013.01); G02F 2202/108 (2013.01); G02F 2203/10 (2013.01);
Abstract

An optical interconnect system has first and second waveguides each with wedge-shaped cross-section at a first end, disposed over an optical modulator. The optical modulator is a surface-plasmon multi quantum well (SP-MQW) modulator, the first waveguide an input waveguide and the second waveguide configured an output waveguide. In embodiments the SP-MQW modulator has multiple semiconductor layers disposed atop a lower metal layer between 10 and 300 nanometers thick and configured such that incident light is reflected at the lower metal layer unless a voltage is applied to the semiconductor layers, when incident light is coupled into a surface plasmon mode in the lower metal layer.


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