The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Apr. 16, 2019
Applicant:

Finisar Corporation, Sunnyvale, CA (US);

Inventors:

Daniel Mahgerefteh, Los Angeles, CA (US);

Bryan Park, Sunnyvale, CA (US);

Jianxiao Chen, Fremont, CA (US);

Xiaojie Xu, Pleasanton, CA (US);

Gilles P. Denoyer, San Jose, CA (US);

Bernd Huebner, Mountain View, CA (US);

Assignee:

II-VI Delaware Inc., Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/122 (2006.01); G02B 6/136 (2006.01); G02B 6/124 (2006.01); G02B 6/126 (2006.01); G02B 6/27 (2006.01); G02B 6/125 (2006.01); G02B 6/30 (2006.01); G02B 6/42 (2006.01);
U.S. Cl.
CPC ...
G02B 6/1228 (2013.01); G02B 6/124 (2013.01); G02B 6/125 (2013.01); G02B 6/126 (2013.01); G02B 6/1221 (2013.01); G02B 6/1223 (2013.01); G02B 6/136 (2013.01); G02B 6/2726 (2013.01); G02B 6/2773 (2013.01); G02B 6/305 (2013.01); G02B 6/4208 (2013.01); G02B 6/4215 (2013.01); G02B 2006/12038 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12069 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12121 (2013.01); G02B 2006/12123 (2013.01); G02B 2006/12147 (2013.01); G02B 2006/12157 (2013.01); G02B 2006/12164 (2013.01);
Abstract

In an example, a photonic system includes a Si PIC with a Si substrate, a SiObox formed on the Si substrate, a first layer, and a second layer. The first layer is formed above the SiObox and includes a SiN waveguide with a coupler portion at a first end and a tapered end opposite the first end. The second layer is formed above the SiObox and vertically displaced above or below the first layer. The second layer includes a Si waveguide with a tapered end aligned in two orthogonal directions with the coupler portion of the SiN waveguide such that the tapered end of the Si waveguide overlaps in the two orthogonal directions and is parallel to the coupler portion of the SiN waveguide. The tapered end of the SiN waveguide is configured to be adiabatically coupled to a coupler portion of an interposer waveguide.


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