The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Dec. 11, 2017
Applicant:

National Applied Research Laboratories, Taipei, TW;

Inventors:

Ting-Jen Hsueh, Tainan, TW;

Yu-Jen Hsiao, Tainan, TW;

Yu-Te Lin, Tainan, TW;

Yen-Hsi Li, Tainan, TW;

Yung-Hsiang Chen, Tainan, TW;

Jia-Min Shieh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/12 (2006.01); G01N 33/00 (2006.01); G01N 21/3504 (2014.01); G01N 27/62 (2006.01); G01N 21/359 (2014.01);
U.S. Cl.
CPC ...
G01N 33/0009 (2013.01); G01N 21/3504 (2013.01); G01N 21/359 (2013.01); G01N 27/12 (2013.01); G01N 27/123 (2013.01); G01N 27/125 (2013.01); G01N 27/626 (2013.01);
Abstract

The present invention provides a miniature gas sensor, which comprises a gas sensor chip. The gas sensor chip includes a hollow structure on the back. An insulating layer is disposed below the sensing material. A miniature heating device is disposed surrounding the sensing material. The sensing material is adhered to the sensing electrodes. The sensing material includes two metal oxide semiconductors or a compound structure of the sensing layer having a metal oxide semiconductor and a reaction layer with a rough surface. An interface layer is sandwiched between the two metal oxide layers for increasing the efficiency in sensing gas. The gas sensor according to the present invention can be implemented on silicon substrate with hollow structures. In addition, the size of the chip can be miniaturized.


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