The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Mar. 20, 2014
Applicants:

Noritake Co., Limited, Aichi, JP;

Noritake Itron Corporation, Mie, JP;

Inventors:

Hitoshi Tsuji, Mie, JP;

Tadami Maeda, Mie, JP;

Isamu Kanda, Mie, JP;

Assignees:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/18 (2006.01); H05K 9/00 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); C23C 14/00 (2006.01); C23C 14/24 (2006.01); C23C 14/58 (2006.01);
U.S. Cl.
CPC ...
C23C 14/185 (2013.01); C23C 14/0036 (2013.01); C23C 14/06 (2013.01); C23C 14/0688 (2013.01); C23C 14/24 (2013.01); C23C 14/34 (2013.01); C23C 14/5873 (2013.01); H05K 9/0084 (2013.01); H05K 9/0094 (2013.01); H05K 9/0096 (2013.01);
Abstract

There is provided an inexpensive electromagnetic shield that can achieve exceptional shielding and display visibility characteristics, and provide high environmental resistance as necessary. In an electromagnetic shield (), an intermediate layer () is formed on a glass substrate () comprising soda lime glass, an electroconductive layer () of Al is formed thereon, and openings () are formed by wet etching on the intermediate layer () and the electroconductive layer () after these layers have been formed by sputtering or vacuum deposition. Furthermore, an ITO layer () is formed on the entire glass surface including the intermediate layer () and the electroconductive layer () after the openings () are formed. In this configuration, the intermediate layer () comprises a mixture of at least one metal selected from chromium, molybdenum, and tungsten, and at least one oxide selected from oxides of silicon, oxides of aluminum, and oxides of titanium.


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