The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Sep. 09, 2016
Applicant:

Toray Industries, Inc., Tokyo, JP;

Inventors:

Yoshihide Hirai, Otsu, JP;

Eiichiro Tamaki, Otsu, JP;

Manabu Kawasaki, Otsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/182 (2017.01); H01M 4/62 (2006.01); C01B 32/184 (2017.01); C01B 32/194 (2017.01); H01M 4/131 (2010.01); H01M 4/1391 (2010.01); C01B 32/198 (2017.01); C01B 32/186 (2017.01); H01M 4/04 (2006.01); H01M 4/133 (2010.01); H01M 4/1393 (2010.01); H01M 4/36 (2006.01); H01M 4/583 (2010.01); H01M 10/0525 (2010.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C01B 32/182 (2017.08); C01B 32/184 (2017.08); C01B 32/186 (2017.08); C01B 32/194 (2017.08); C01B 32/198 (2017.08); H01M 4/0428 (2013.01); H01M 4/131 (2013.01); H01M 4/133 (2013.01); H01M 4/1391 (2013.01); H01M 4/1393 (2013.01); H01M 4/364 (2013.01); H01M 4/583 (2013.01); H01M 4/625 (2013.01); H01M 10/0525 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 2204/04 (2013.01); C01B 2204/20 (2013.01); C01B 2204/32 (2013.01);
Abstract

A graphene material has a specific form that has a high dispersibility and can maintain a high electric conductivity and ion conductivity when used as material for electrode manufacturing. A graphene dispersion liquid is provided including graphene dispersed in an organic solvent and meeting both 0.5 μm≤S≤15 μm and 1.0≤D/S≤3.0 wherein D is the median diameter (μm) of the graphene measured by the laser diffraction/scattering type particle size distribution measurement method and S is the average size (μm) in the planar direction of the graphene calculated from the arithmetic mean of the longest diameter and shortest diameter of the graphene observed by a laser microscope.


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