The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Jan. 25, 2017
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Yoshiaki Hirata, Chiyoda-ku, JP;

Nobuaki Konno, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01); H01L 23/04 (2006.01); H01L 23/08 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/007 (2013.01); B81C 1/00301 (2013.01); H01L 23/04 (2013.01); H01L 23/08 (2013.01); H01L 23/48 (2013.01); H01L 24/72 (2013.01); H01L 24/90 (2013.01); B81B 2207/07 (2013.01); B81B 2207/095 (2013.01); B81C 2203/0118 (2013.01); B81C 2203/031 (2013.01); B81C 2203/035 (2013.01);
Abstract

A semiconductor apparatus includes a first substrate having a first surface, a semiconductor device, a first flexible connecting member electrically connected to the semiconductor device, a first pad connected to the first flexible connecting member, and a second substrate including a bump and an interconnect. The second substrate is a low-temperature sintered ceramic substrate containing alkali metal ions. The first pad is connected to the interconnect via the bump. The first pad has at least a portion overlapping the semiconductor device in a plan view seen in a direction along a normal to the first surface. The semiconductor apparatus can thus be miniaturized.


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